1. Product Scientific Research and Structural Honesty
1.1 Crystal Chemistry and Bonding Characteristics
(Silicon Carbide Crucibles)
Silicon carbide (SiC) is a covalent ceramic composed of silicon and carbon atoms arranged in a tetrahedral lattice, mainly in hexagonal (4H, 6H) or cubic (3C) polytypes, each displaying extraordinary atomic bond stamina.
The Si– C bond, with a bond power of about 318 kJ/mol, is amongst the greatest in architectural ceramics, giving exceptional thermal security, firmness, and resistance to chemical assault.
This robust covalent network results in a material with a melting point going beyond 2700 ° C(sublimes), making it among one of the most refractory non-oxide porcelains readily available for high-temperature applications.
Unlike oxide ceramics such as alumina, SiC preserves mechanical toughness and creep resistance at temperatures above 1400 ° C, where lots of metals and conventional ceramics start to soften or break down.
Its low coefficient of thermal expansion (~ 4.0 × 10 ⁻⁶/ K) incorporated with high thermal conductivity (80– 120 W/(m · K)) allows rapid thermal cycling without tragic cracking, an important attribute for crucible efficiency.
These innate homes come from the balanced electronegativity and comparable atomic sizes of silicon and carbon, which advertise a very secure and largely packed crystal structure.
1.2 Microstructure and Mechanical Durability
Silicon carbide crucibles are usually produced from sintered or reaction-bonded SiC powders, with microstructure playing a crucial function in longevity and thermal shock resistance.
Sintered SiC crucibles are generated via solid-state or liquid-phase sintering at temperatures over 2000 ° C, frequently with boron or carbon ingredients to boost densification and grain border cohesion.
This procedure produces a completely dense, fine-grained framework with marginal porosity (
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