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Applications of GaN

wallpapers News 2021-06-30
New electronic devices
The Gallium nitride material series has low heat generation rate and high breakdown electric field, and is an important material for the development of high-temperature high-power electronic devices and high-frequency microwave devices. At present, with the progress of MBE technology in the application of Gallium nitride materials and breakthroughs in key thin film growth technologies, a variety of Gallium nitride heterostructures have been successfully grown. New devices such as Metal Field Effect Transistor (MESFET), Heterojunction Field Effect Transistor (HFET) and Modulation Doped Field Effect Transistor (MODFET) have been fabricated from Gallium nitride materials. Modulation-doped AlGallium nitride/Gallium nitride structure has high electron mobility (2000cm2/v·s), high saturation velocity (1×107cm/s), and low dielectric constant. It is the preferred material for making microwave devices; Gallium nitride The wider band gap (3.4eV) and sapphire and other materials are used as the substrate, which has good heat dissipation performance, which is conducive to the operation of the device under high power conditions.
Optoelectronic devices
The Gallium nitride material series is an ideal material for short-wavelength light-emitting devices. The band gap of Gallium nitride and its alloys covers the spectral range from red to ultraviolet. Since Japan developed a homojunction Gallium nitride blue LED in 1991, InGallium nitride/AlGallium nitride double heterojunction ultra-bright blue LEDs and InGallium nitride single quantum well Gallium nitride LEDs have come out one after another. At present, Zcd and 6cd single quantum well Gallium nitride blue and green LEDs have entered the mass production stage, thus filling the gap in the market for many years of blue LEDs. The development history of LED marked by luminous efficiency is shown in Figure 3. Blue light-emitting devices have a huge application market in the fields of high-density optical disc information access, all-optical display, and laser printers. With the continuous deepening of the research and development of III-nitride materials and devices, the GaInN ultra-high blue and green LED technology has been commercialized. Now major companies and research institutions in the world have invested heavily in the development of blue LEDs. The ranks of competition.
In 1993, Nichia first developed a high-brightness GaInN/AlGallium nitride heterojunction blue LED with a luminous brightness exceeding LCD. Using Zn-doped GaInN as the active layer, the external quantum efficiency reached 2.7%, the peak wavelength was 450nm, and the product was commercialized.化. In 1995, the company introduced a commercial Gallium nitride green LED product with a light output power of 2.0mW and a brightness of 6cd, with a peak wavelength of 525nm and a half-width of 40nm. Recently, the company used its blue LED and phosphorescent technology to launch a white light solid-state light-emitting device product with a color temperature of 6500K and an efficiency of 7.5 lumens/W. In addition to Nichia, HP, Cree and other companies have launched their own high-brightness blue LED products. The market for high-brightness LEDs is expected to jump from US$386 million in 1998 to US$1 billion in 2003. The applications of high-brightness LEDs mainly include automotive lighting, traffic signals and outdoor road signs, flat-panel gold displays, high-density DVD storage, blue and green light submarine communications, etc.